Relative Stability Analysis of MESFET under Illumination
نویسنده
چکیده
The paper presents the relative stability behavior of the GaAs MESFET under varied illumination and frequency. The model of the device is developed in MATLAB and explains the shifts in the pole positions of transfer function with illumination and frequency for the first time. The variations of minority carrier life time and signal to noise ratio various optical illuminations under different frequencies have been simulated. The study reveals that the device relatively becomes less stable under high illumination at higher frequencies.
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تاریخ انتشار 2011